The shape memory thin films are considered as better candidates for actuation in MEMS devices compared to other smart materials due to their ability to produce larger recovery strains at low operation voltages. Although Ni-Ti thin films are most renowned shape memory alloys (SMA), their applications are limited by low transformation temperature (below 100 ℃) [1]. Recently, Ti based SMAs are gaining attention due to their ability to produce stable shape memory properties at higher temperatures. In current study, Ti-Zr-Mo high-temperature shape memory thin films were fabricated using multi-target DC/RF magnetron sputtering system on Si (100) and Si/SiO₂ substrates in multi-layer mode. Deposition time and target power were varied to obtain the desired composition. Post-annealing was carried out at 500 °C, 600 °C and 700 °C for 15 min each to crystallize the thin films that were amorphous in the as-deposited condition. The annealing temperature was varied to observe the structural and morphological changes. The total thickness of the film was found to be around 300 nm as measured from the stylus profilometer and cross-sectional micrographs. The AFM results reveal that surface roughness decreases with increase in annealing temperature, attributing to higher ad-atom mobility at high temperatures. The martensite phase (α’) was observed after annealing at 500 °C and the formation of silicides was observed in the films deposited on Si substrate after annealing at 600 °C and 700 °C. Shape recovery ratio was measured with a combination of nanoindentation and AFM techniques. The enhanced mechanical properties with maintaining structural stability was observed in Ti-Zr-Mo thin films deposited on Si/SiO₂ substrate after annealing at 700 °C for 15 min.