Silicon oxycarbide (SiOC) structures fabricated via additive manufacturing (3D printing) demonstrate significant commercial potential due to their superior mechanical properties and cost-effectiveness. However, challenges such as high shrinkage during sintering, chemical inertness, and susceptibility to defects hinder their broader application. To overcome these issues, we have optimized the precursor constituents, photopolymerization techniques, and debinding/sintering processes. The modifications aim to minimize shrinkage, enhance mechanical strength, and reduce residual stresses. The physical and chemical properties are further tailored for practical application, including conductivity, permittivity, susceptibility, oxidation resistance, and catalytic activity. Conductive and semiconductive layers are deposited onto SiOC structures via chemical and electrochemical methods, enabling their use in energy storage, catalysis, and sensing. A protective coating can be applied to SiOC structures for high-temperature and oxygen-rich environments. Further enhancements include the introduction of metal dopants to create metal-doped SiOC with adjustable dielectric and piezoresistive properties. The approach facilitates the large-scale production of defect-free and functional SiOC 3D structures with low rejection rates, enabling them to work as engineering components with good reliability and long durability.