Despite the great progress that has been achieved in the wafer-scale integration of Graphene and other 2D materials, there are still major challenges hampering the clean and solvent-free transfer from the growth substrates to the chip, which usually introduces additional defects and flaws compromising the overall performance of micro and nano-devices. Recently, we proposed the so-called “Laser-Induced Forward Transfer” method (LIFT), as a digital and solvent-free approach for the high-resolution and intact transfer of 2D materials’ pixels [1]. Here, we will further highlight the versatility of LIFT by reporting results on the high-quality digital transfer of graphene, MoS2, hBN and 2D heterostructures. These materials stand out in the field of nanoelectronics, sensors and photonics owing to their unique optoelectronic properties, but their high-quality and intact transfer remains a hurdle. In this work, the high quality of the transferred films has been confirmed by systematic characterization based on Scanning Electron Microscopy and Raman spectroscopy, as well as the 2D semiconductor carriers’ mobility extraction by IV measurement. Moreover, a proof of concept of the LIFT of these materials will be demonstrated by depositing patterns of 2D-materials’ pixels and heterostructures, with form factors and electronic properties suitable for FETs. The transferred graphene pixels exhibited remarkably high hole and electron mobilities up to 1800 cm2V-1s-1. In addition, we have achieved 2D material-based capacitors with capacitance more than 10nF/cm2. The capacitor configuration comprises graphene as the top plate and SiO2 or hBN as dielectrics, aiming to increase the stability of the device. Characterization results for both the morphology and the electrical properties of the printed devices will be reported. The presented results highlight the potential of LIFT for the wafer scale integration of 2D materials, therefore fostering the wider industrial incorporation of 2D materials in electronics, optoelectronics and photonics.