Fraunhofer-Institut für Lasertechnik ILT
The requirements on resolution of direct laser structuring are constantly growing and are now firmly in the sub-µm range. The most effective way to achieve such high resolution is the use of laser wavelengths in deep UV (<250nm) range. As the power of excimer and solid-state lasers continues to increase, not only indirect structuring, such as photolithography, but also direct ablation become possible efficiently over large surface areas. Still, efficient use of the available laser intensity is required to achieve high throughput of the nanostructuring tools. One method that is able to provide up to lambda/2 resolution while minimising the system’s power loss is use of phase shift masks. Unlike absorber-based masks that absorbs at least 50% of the incoming radiation, phase shift masks redistribute the energy with up to 90% total efficiency. Both one-dimensional and two-dimensional periodic patterns on 100nm-scale can then be created over large areas. The contribution will discuss the theoretical limits of the technology and will demonstrate several selected applications of the technology on basis of high pulse energy excimer lasers systems LEAP and COMPEX from Coherent.
Abstract
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