Antiferroelectrics have attracted increasing research interests in recent years due to both their great potential in energy storage applications and intriguing structural characteristics. AgNbO3 and its derivatives are emergent lead-free antiferroelectrics whose great potential in energy storage applications makes them promising candidates to substitute conventional lead-containing antiferroelectrics. This talk will summarize our recent works regarding AgNbO3. We first found that Ta-substitution for Nb can enhance its antiferroelectricity with a more perfect double hysteresis loop, leading to high energy storage density. Although the antiferroelectric phase stability of AgNbO3 ceramics can also be significantly enhanced by A-site doping with La or Sm, the maximum polarization of induced ferroelectric state is apparently reduced. Nevertheless, high energy storage performance can be achieved in La or Sm doped AgNbO3 ceramics because of improved breakdown strength, in particular the efficiency can by increased by A-site doping which causes a more diffused antiferroelectric to ferrolectric transition. Our recent work revealed that the incorporation of La tends to suppress the structural distortion with respect to bond length distributions as well as octahedral tilting. Finaly, I will introduce our most recent work about the development of phase-pure antiferroelectric AgNbO3 films on Si substrates by chemical solution deposition. We believe that AgNbO3 films which may attract scientific interest and potential applications.

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