Piotr Konarski¹, Jarosław Lepczak¹, Joachim Ażgin^{1, 2}, Martin Kasik³

¹Łukasiewicz Research Network – Tele and Radio Research Institute, Ratuszowa 11, 03-450 Warszawa, Poland

²Faculty of Chemistry, Warsaw University of Technology, ul. Noakowskiego 3, 00-664 Warszawa, Poland

³MK2 Technologies Inc., Jamesville, NY 13078, USA

Email: piotr.konarski@itr.lukasiewicz.gov.pl

Two analytical techniques GDMS and SIMS will be compared. Basic phenomena such as ion bombardment and sputtering of the analyzed surface will be presented. Differences in the ionization phenomenon used in both techniques will be discussed as well as the so-called matrix effects present in these techniques.

The parameters of depth profile analysis and surface mapping for these two techniques will be compared.

We will also present a comparison of relative sensitivity factor (RSF) values for a set of elements analyzed by these two techniques.

As for GDMS, experimental RSF values were obtained from numerous measurements done for several matrices with the use of commercial GDMS instruments - VG9000 (Thermo/VG Elemental).

As for SIMS, RSF values were obtained by examining 19 samples of pure elements/matrices using the Hiden Analytical SIMS Workstation. The samples were examined with a 5 keV O₂⁺ ion beam.

In addition, the results of experiments concerning the modification of the SIMS technique in the form of the storing matter [1, 2] technique will also be shown. In this modification of the SIMS technique, unlike the classical technique, two phenomena, i.e. ion sputtering and ionization, are separated. The “storing matter” technique does not use the ionization phenomenon present during ion etching of the analyzed surface. However, the sputtered material created during this etching is deposited onto the surface of the collector made of MoO_3-x, and only this “stored” material is analyzed during the SIMS analysis. The storing matter experiments were carried out on the Hiden Analytical SIMS Workstation system additionally equipped with a special manipulator enabling the analysis of the MoO_3-x collector surface.