Capacitors which are composed of dielectric materials are used in electronic devices and electric automobiles and have a role of supplying stable voltage required for semiconductor devices and circuits. Therefore, it is essential to ensure high reliability for dielectrics to operate stably at harsh condition. In response to this need, dielectrics capacitors based on BaTiO3(BT) composition are actively being studied. The BaTiO3 composition shows high permittivity(𝜀_r) around 2000 at room temperature but the low curie temperature around 120 degrees Celsius limits the application on capacitor leading to low reliability. So we synthesized BT system doped with Dysprosium(Dy) to stabilize and improve high reliable dielectric property. Here, we also doped Dy³⁺ ion on each site of BT (A-site, B-site and A&B site) and compared the properties according to the Dy-doped site. As a result, all Dy-doped BTs exhibited improved dielectric properties and reliability and especially Dy-doped on A&B site showed the most increased dielectric constant and Temperature Coefficient of Capacitance(TCC) compared other samples.