This study presents the micromorphology of SnTe thin films, aiming to elucidate the crucial influence of surface structures on the unique electrical features of topological crystalline insulators (TCIs). Utilizing RF magnetron sputtering, uniform and fine-grain SnTe thin films with different thicknesses were fabricated on silicon substrates. Our investigation has focused on the structural and morphological characteristics through comprehensive analyses, incorporating X-ray diffraction, transmission electron microscopy, and atomic force microscopy. The results revealed a stoichiometric ratio consistent with the rock-salt structure, providing a robust foundation for subsequent examinations.

Going beyond traditional characterizations, our study introduced a diverse set of analyses, incorporating new methods for surface analysis as well as temperature-dependent resistivity and magnetoresistivity to establish a comprehensive understanding of the interplay between micromorphology and electrical performance. This approach not only deepens our comprehension of SnTe thin films but also offers insights into their potential applications in device fabrication. The observed correlation between optimized crystalline properties, micromorphology, and electrical behavior with increasing thickness underscores the significance of comprehending the influence of film thickness on material properties.

These findings position SnTe thin films as highly promising candidates for a variety of applications, ranging from low-dissipation transistors to topological crystalline insulators and optoelectronic devices. Our research enhances the understanding of the relationship between microstructure and other surface properties, contributing to future developments in the burgeoning field of topological crystalline insulators.