Recently, AgBiS₂ has received extensive attention as an absorber layer for solar cell applications among various types of metal chalcogenide compounds. AgBiS₂ is based on environmentally friendly and earth-abundant elements. It possesses excellent optoelectronic properties, such as a bandgap of 1.1 - 1.3 eV suitable for light harvesting, a large absorption coefficient of 10³ - 10⁵ cm^-1 in the visible spectral region, and high stability in high relative humidity and even in water. Up to now, solution-processed AgBiS₂ solar cells utilizing the molecular precursor method exhibited a notably lower PCE (< 2%). However, despite this drawback, the method holds significant potential for the commercialization process due to its utilization of cost-effective chemicals and straightforward processing.

In this context, we present an analysis of how the type of charge transport layer (CTL) and the cation exchange ratio between Bi and Sb influence the performance of solution-processed molecular precursor AgBiS₂ solar cells. The optimized solar cell device exhibited a power conversion efficiency (PCE) of over 2.5%, emphasizing the importance of energy level alignment and surface defect passivation in reducing interface charge recombination. Furthermore, we will provide data on UV-Visible absorption, SEM morphology, and XRD for the cation-exchanged AgBiS₂ under various processing conditions.