The nanoscale physics driving the switching behavior of memristive devices remains a cornerstone for the advancement of neuromorphic systems. This study explores the intricate dynamics of these devices, combining theoretical modeling with experimental validation to reveal how interconnected resistive, capacitive, and inductive effects shape their behavior. By employing physics-inspired computational models that closely reflect realistic nanoscale interactions, this work captures nonlinear current-voltage characteristics and frequencydependent behavior with remarkable accuracy. The synergy between theory and experiment reveals how these dynamics can be exploited to optimize device performance. This deeper understanding provides a critical link between the fundamental physics of memristive switching and its potential to emulate synaptic functionality, offering a pathway to innovative and robust neuromorphic architectures.

Acknowledgements:

Funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) –

Project-ID 434434223- SFB 1461 and Research Grant MU 2332/10-1 in the frame of Priority Program SPP 2253.

The contributions of all other collaborators who supported the research are gratefully acknowledged. The experimental work was conducted by:

[1] Prof. Dr. Hermann Kohlstedt’s group, Nanoelectronics, Faculty of Engineering, Kiel University, Kiel, Germany

[2] Dr.-Ing. Nan Du’s group, Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Jena, Germany