Low melting metallic alloys allowed their using in various areas of practical application but the most important among them is flexible electronics [1-4], which needs the new functional elements with principally another characteristics comparatively with traditional electronics. Eutectic melts such eutectic systems with Ga, In ,Sn ,Bi and Zn has melting point very close to room temperature and being in liquid state show good electrical and thermal conductivity within wide temperature range.  Upon introducing the magnetic nanoparticles into such melts it is possible to form the nanocomposite system with magnetic properties too. It is clear that such three characteristics are most valuable for elements in electronics. Ferofluids have promising application also for biological, medical, and many other industrial purposes. To bring the potential to reality, it is great importance to have an information about the of ferrofluids under different thermodynamic conditions, especially at temperature variation, in the presence of more than one phase and at external influence by magnetic and electric field.
In this work we present the results on structure studies of Ga-based eutectic melts, into which the  magnetic nanoparticles (Fe,Ni, Fe 2O 3) have been introduced. Main attention was paid to the studying the difference between structure of surface layers and the volume of nanocomposite system. The X-ray diffraction data were obtained both for liquid alloys and solidified ones with different cooling rate. It is shown that structural features of surface layers are important not only for practical application but for more deeper understanding of physical processes in 2D –ferrofluids.


[1] Yuntian Wang, Zhixun Wang, Zhe Wang, Ting Xiong, Perry Ping Shum, and Lei Wei Adv. Electron. Mater. 2023, 2201194
[2] Lin, S., Zhang, L. & Cong, L. Sci Rep,  2023, 13, 3914.
[3] Min Li, Da Chen, Xiupeng Deng, Baochun Xu, Mingyue Li, Hongrui Liang, Mengxin Wang, Ge Song, Tong Zhang, and Yijian Liu ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.2c23002
[4Joel Ming Rui Tan, Yousef Farraj, Alexander Kamyshny, and Shlomo Magdassi ACS Appl. Electron. Mater. 2023, https://doi.org/10.1021/acsaelm.2c01728.