This presentation starts with an introduction into recent work on printable digital and analog memristors using metal oxides such as ZnO and WO from precursor solutions. We demonstrate digital switching devices with excellent Roff/Ron ratios (~up to 10^7) and low SET/RESET voltages (<0,5 V) as well as forming free analog memristors that exhibit paired pulse facilitation, short term plasticity and signal filtering capabilities. As a second example, I will discuss more complex hybrid materials such as High-Entropy Metal Organic Frameworks (in our case inkjet printable HKUST-1) as well as High-Entropy Prussian Blue Analogues (HE-PBAs) that can be used as active layers and contribute with their tailor made properties to a unique device performance. We discuss the basic principles of the underlying resistive switching principles and report on the corresponding fabrication processes. For the HE-PBAs we report on the interesting phenomena of current self-compliance which is displayed by the device. Thirdly, we include a discussion of redox-based memristors, the electrochemical metallization type, which typically display a strong intra-device stochastic nature, which is inherently rooted in their redox and ion migration mechanisms. To overcome this issue we propose to insert so called Polyoxometalates into our metal oxide active materials. Polyoxometalates are a class of nano oxo-clusters with versatile redox properties known from catalytic chemistry to enable applications such as energy conversion and water splitting. We will discuss in detail the incorporation of a Wells-Dawson-type polyoxometalate into a ZnO-matrix to serve as the active layer of a printed memristor. The proposed memristor exhibits exceptionally low inter- and intra-device variability, low power consumption, and reliable cycling performance. The results provide an interdisciplinary perspective on practical device engineering.

References
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